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PD - 94444
SMPS MOSFET
IRFIB8N50K
HEXFET(R) Power MOSFET
Applications l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current
VDSS
500V
RDS(on) typ.
290m
ID
6.7A
TO-220 FULL-PAK
Absolute Maximum Ratings
Parameter
ID @ TC = 25C Continuous Drain Current, VGS @ 10V ID @ TC = 100C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM
Max.
6.7 4.2 27 45 0.36 30 17 -55 to + 150
Units
A W W/C V V/ns C
c
PD @TC = 25C VGS dv/dt TJ TSTG
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
e
300 (1.6mm from case ) 1.1(10) N*m (lbf*in)
Avalanche Characteristics
EAS IAR EAR Parameter Single Pulse Avalanche Energyd Avalanche Current Typ. --- --- --- Max. 290 6.7 4.5 Units mJ A mJ
c
Repetitive Avalanche Energy
c
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient
Typ.
--- ---
Max.
2.76 65
Units
C/W
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1
4/21/04
IRFIB8N50K
Static @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
500 --- --- 3.0 --- --- --- --- --- 0.59 290 --- --- --- --- --- --- --- 350 5.0 50 250 100 -100 nA V
Conditions
VGS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 4.0A
f
V A
VDS = VGS, ID = 250A VDS = 500V, VGS = 0V VDS = 400V, VGS = 0V, TJ = 125C VGS = 30V VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
Parameter
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units
4.7 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 17 16 28 8.4 2160 240 27 2600 62 120 --- 89 24 44 --- --- --- --- --- --- --- --- --- --- pF ns nC V ID = 6.7A VDS = 400V VGS = 10V ID = 6.7A RG = 38 VGS = 10V VGS = 0V VDS = 25V
Conditions
VDS = 50V, ID = 4.0A
f f
VDD = 250V
= 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 400V, = 1.0MHz VGS = 0V, VDS = 0V to 400V
e
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ach Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time --- --- --- --- 430 2840 2.0 640 4270 V ns nC
Min. Typ. Max. Units
--- --- --- --- 6.7 A 27
Conditions
MOSFET symbol showing the integral reverse
G D
S p-n junction diode. TJ = 25C, IS = 6.7A, VGS = 0V
f
TJ = 25C, IF = 6.7A di/dt = 100A/s
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11). Starting TJ = 25C, L = 13mH, RG = 25, IAS = 6.7A, dv/dt = 17V/ns (See Figure 12a). ISD 6.7A, di/dt 330A/s, VDD V(BR)DSS, TJ 150C.
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
2
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IRFIB8N50K
1000
TOP VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V
100
TOP VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
10
BOTTOM
10
BOTTOM
1
1
5.0V
0.1
5.0V
0.01
0.1
20s PULSE WIDTH Tj = 25C
0.001 0.1 1 10 100 0.01 0.1 1
20s PULSE WIDTH Tj = 150C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.00
3.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 6.7A
ID, Drain-to-Source Current ()
10.00
T J = 150C
2.5
2.0
1.00
1.5
0.10
T J = 25C VDS = 50V 20s PULSE WIDTH
1.0
0.5
0.01 4.0 5.0 6.0 7.0 8.0 9.0 10.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFIB8N50K
100000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd
12 ID = 6.7A 10 8
VGE (V)
10000
400V 250V 100V
C, Capacitance(pF)
Ciss
1000
6 4
100
Coss Crss
10
2 0
1 10 100 1000
1
0
10
20
30
40
50
60
70
VDS, Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100.00
100 OPERATION IN THIS AREA LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
10.00
T J = 150C
ID, Drain-to-Source Current (A)
10 100sec
1.00
TJ = 25C
1msec 1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100
10msec
VGS = 0V 0.10 0.0 0.5 1.0 1.5 VSD, Source-toDrain Voltage (V)
1000
10000
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFIB8N50K
7.0 6.0
V DS VGS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
RD
D.U.T.
+
ID , Drain Current (A)
5.0 4.0 3.0 2.0 1.0 0.0 25 50 75 100 125 150
-VDD
Fig 10a. Switching Time Test Circuit
VDS 90%
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 10 PDM t1 t2
0.01 0.00001
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFIB8N50K
700
EAS , Single Pulse Avalanche Energy (mJ)
600 500 400
ID 3.0A 4.2A BOTTOM 6.7A TOP
15V
VDS
L
DRIVER
300
RG D.U.T
IAS
20V
200 100 0 25 50 75 100 125 150
tp
+ - VDD
A
0.01
Fig 12c. Unclamped Inductive Test Circuit
Starting T J , Junction Temperature (C)
Fig 12a. Maximum Avalanche Energy Vs. Drain Current
tp
V(BR)DSS
I AS
Fig 12d. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K 12V .2F .3F
QG
VGS
D.U.T. + V - DS
QGS VG
QGD
VGS
3mA
IG
ID
Current Sampling Resistors
Charge
Fig 13a. Gate Charge Test Circuit
Fig 13b. Basic Gate Charge Waveform
6
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IRFIB8N50K
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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IRFIB8N50K
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
10.60 (.417) 10.40 (.409) 3.40 (.133) 3.10 (.123) - A3.70 (.145) 3.20 (.126) 4.80 (.189) 4.60 (.181)
o
2.80 (.110) 2.60 (.102) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE
7.10 (.280) 6.70 (.263)
16.00 (.630) 15.80 (.622)
1.15 (.045) MIN. 1 2 3
NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982 2 CONTROLLING DIMENSION: INCH.
3.30 (.130) 3.10 (.122) -B13.70 (.540) 13.50 (.530) C D
A 3X 1.40 (.055) 1.05 (.042) 3X 0.90 (.035) 0.70 (.028) 0.25 (.010) 2.54 (.100) 2X M AM B 3X 0.48 (.019) 0.44 (.017)
B
2.85 (.112) 2.65 (.104)
MINIMUM CREEPAGE DISTANCE BETW EEN A-B-C-D = 4.80 (.189)
TO-220 Full-Pak Part Marking Information
A B # ' D A S D A I 6 A T D A T D C U ) @ G Q H 6 Y @
TO-22O Full-Pak package is not recommended for Surface Mount Application.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/04
A G 7 H @ T T 6 A C U D X ! " # " A @ 9 P 8 A U P G ( ( ( A # ! A X X A I P A 9 @ G 7 H @ T T 6 A F A A @ I D G A G 7 H @ T T 6 A @ C U A I D
S @ 7 H V I A U S 6 Q
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
G 6 I P D U 6 I S @ U I D S @ D A D U 8 @ S P B P G G 7 H @ T T 6 @ 9 P 8 A U P G
B # ' D A S D F # ! ( ! " A A A A A A A A A # " A
@ 9 P 8 A @ U 6 9 ( ( ( A 2 A ( A S 6 @ # ! A F @ @ X F A @ I D G
8
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